发明名称 |
CASCODE CIRCUITS IN DUEL THRESHOLD VOLTAGE, BICMOS AND DTMOS TECHNOLOGIES |
摘要 |
The various embodiments utilize cascode circuits in dual-threshold-voltage (dual-VT), BiCMOS and DTMOS technologies. The circuit topologies include cascode-connected transistors in the output branch of a current mirror and as a cascode amplifier. Such configurations are capable of both high output impedance and high output swing. The cascode circuits of the various embodiments are operable without separate gate-bias voltages for the cascode-connected transistors. The current mirrors can be used in circuits requiring a regulated current or other current mirroring applications. The current mirrors can further be used as active loads, such as an active load for an amplifier.
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申请公布号 |
WO0169681(A9) |
申请公布日期 |
2002.10.24 |
申请号 |
WO2001US04649 |
申请日期 |
2001.02.13 |
申请人 |
INTEL CORPORATION;SINGH, SURINDER, P. |
发明人 |
SINGH, SURINDER, P. |
分类号 |
G05F3/26;(IPC1-7):G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
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