| 摘要 |
A process for preparation of silicon carbide by depositing silicon carbide on at least a part of a surface of a substrate having on its surface undulations extending approximately in parallel with each other, wherein a center line average of said undulations is in a range of from 3 to 1,000 nm, gradients of inclined planes of said undulations are in a range of from 1 DEG to 54.7 DEG , and, in a cross section orthogonal to a direction along which the undulations are extended, portions at which neighboring inclined planes are brought in contact with each other are in a curve shape. The substrate is silicon or silicon carbide having a surface with a plane normal in a crystallographic <001> orientation, having ä001ü planes accounting for 10 % or less of the entire area of the surface, etc. Also claimed is a single crystal silicon carbide having a planar defect density of 1,000 /cm<2> or lower, or having an internal stress of 10 MPa or lower. <IMAGE> |
