发明名称 |
Light-emitting device and display apparatus using the same |
摘要 |
<p>A light-emitting device and a display apparatus using the light-emitting device are provided. The light-emitting device includes: a p-type or n-type substrate (11); and at least one doped region (15) formed to emit light by quantum confinement in a p-n junction (14) between the doped region (15) and the substrate (11). An electrode (17,19) is formed such that the light emitted from the p-n junction of the doped region is externally emitted through both surfaces of the substrate. The light-emitting device has a higher light-emitting efficiency than porous silicon-based and nano-crystal silicon-based light-emitting devices and can externally emit the light generated from the p-n junction in two directions. All of the light emitted in two directions can be utilized, thereby maximizing light-emitting efficiency.</p> |
申请公布号 |
EP1251568(A2) |
申请公布日期 |
2002.10.23 |
申请号 |
EP20020252707 |
申请日期 |
2002.04.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, BYOUNG-LYONG;LEE, EUN-KYUNG |
分类号 |
G09F9/33;G09F9/40;H01L27/15;H01L33/24;H01L33/34;H01L33/42;H01L33/60;(IPC1-7):H01L33/00 |
主分类号 |
G09F9/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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