| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal by a vapor pressure controlled Czochralski(VCZ) method, which has a heat wall sealing vessel which can be opened even when it is hot and which is used repeatedly. SOLUTION: The VCZ single crystal growing apparatus has a single crystal furnace, a heating unit, a mechanical transmission unit, a gas control unit, a heat wall sealing vessel 2 provided in the single crystal furnace, a crucible 6 placed in the heat wall sealing vessel 2, a crucible transmission shaft 7 and a seed shaft 8 each being inserted into the heat wall sealing vessel 2 through sealing devices 9, 10. Further, the heat wall sealing vessel 2 mentioned above has an upper vessel part 3 and a lower vessel part 4, and a connection device 5 for sealing is interposed between the upper vessel part 3 and the lower vessel part 4. |
