发明名称 SEMICONDUCTOR RING LASER GYRO
摘要 PROBLEM TO BE SOLVED: To provide a ring laser gyro which is less liable to be affected by irregularities of side surfaces of light guides, and resulting in having little back scattering, and resisting the occurrence of lock-in phenomena. SOLUTION: In each of the light guides constituting a ring resonator, a high resistance layers 40 are formed on both sides of an active layer 24. Regions, having no light gain, are thereby formed on both sides of the active layer 24 having a light gain. The resistance layers 40 are in contact with air (refractive index of 1). The refractive index of a semiconductor is about 3.5, and the difference in refractive indices actualizes an index light guide structure. Further more, a gain light guide structure is formed in the index light guide structure. Since the resistance layers (semiconductor) 40 have no optical gain, light intensity is small at their interfaces. Even if the side surfaces of the light guides have irregularities, the light intensity of back scattering light is made small relative to laser light and the lock-in phenomenon, due to non-linearity effects being less liable to occur. The resistance layers 40 without optical gains can be actualized by proton injection or the like.
申请公布号 JP2002310666(A) 申请公布日期 2002.10.23
申请号 JP20010118295 申请日期 2001.04.17
申请人 CANON INC 发明人 NUMAI TAKAAKI
分类号 G01C19/66;G02B6/122;H01S5/10;(IPC1-7):G01C19/66 主分类号 G01C19/66
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