| 摘要 |
In a semiconductor laser device, a GaAs substrate of a first conductive type, a lower cladding layer of the first conductive type, a lower optical waveguide layer made of InGaP of an undoped type or the first conductive type, an active layer made of InGaAsP or InGaAs, a first upper optical waveguide layer made of InGaP of an undoped type or a second conductive type, a second upper optical waveguide layer made of InGaP of an undoped type or the second conductive type, an upper cladding layer of the second conductive type, and a contact layer of the second conductive type are formed in this order to form a layered structure. Near-edge portions of the active layer and the first upper optical waveguide layer, which are adjacent to opposite end faces of the layered structure, are removed, and the second upper optical waveguide layer is formed over the first upper optical waveguide layer and near-edge areas of the lower optical waveguide layer, where the opposite end faces are perpendicular to the direction of laser light which oscillates in the semiconductor laser device. <IMAGE> |
