SILICON CARBIDE SINGLE CRYSTAL INGOT, PRODUCTION METHOD THEREFOR AND METHOD FOR MOUNTING SEED CRYSTAL FOR GROWING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To obtain a large diameter ingot of high quality which hardly has defects of linear voids, and to provide a method for producing SiC single crystals by which the ingot can be produced with high reproducibility. SOLUTION: Silicon carbide single crystals are grown by a sublimation recrystallization method using seed crystals. In this case, the back sides of the seed crystals and the surface of a cover part of a crucible to be mounted with the seed crystals are subjected to flattening treatment. Both are physically stuck closely with each other to mount the seed crystals thereon, so that the silicon carbide single crystal ingot of high quality can be obtained.