| 摘要 |
PURPOSE: A fabrication method of a GaN compound semiconductor device is provided to simplify manufacturing processes and to prevent the damage of an n-type GaN semiconductor layer due to a plasma etching without using dry-etching directly an active layer and a p-type GaN semiconductor layer. CONSTITUTION: After forming a buffer layer(20) on a substrate(10), an n-type GaN semiconductor layer(30) is formed on the buffer layer(20). A sacrificial layer(60) made of a silicon oxide is formed on the first region(13) of the n-type GaN semiconductor layer(30). An active layer(40) and a p-type GaN semiconductor layer(50) are sequentially formed on the resultant structure. The n-type GaN semiconductor layer(30) of the first region(13) is exposed by removing the sacrificial layer(60). Then, metal electrodes are formed on the exposed n-type GaN semiconductor layer(30) and p-type GaN semiconductor layer(50), respectively. |
