| 摘要 |
PROBLEM TO BE SOLVED: To provide a (Zrx , Hf1-x )Siy O2(1+y) target material for sputtering and depositing an oxide thin film which has a high dielectric constant and a small leak current, is usable as a high dielectric gate insulation film provided with characteristics replaceable to an SiO2 film, and is suitable for the deposition of a (Zrx , Hf1-x )Siy O2(1+y) film, and a production method therefor. SOLUTION: The target material for sputtering is expressed by the composition of (Zrx , Hf1-x )Siy O2(1+y) (0<=x<=1, and 0.5<=y<=1.2). |
