发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: To provide a semiconductor device of relatively high heat conductivity wherein sufficient mechanical strength and specified electric insulation are assured, and which is manufactured at a low cost. CONSTITUTION: In a semiconductor device, an insulating substrate 2 whose base is a single crystal silicon is formed on a heat-radiation metal base plate.
申请公布号 KR20020080234(A) 申请公布日期 2002.10.23
申请号 KR20010078753 申请日期 2001.12.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TOMOMATSU YOSHIFUMI
分类号 H01L25/00;H01L21/84;H01L25/07;H01L25/18;H01L27/12 主分类号 H01L25/00
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