发明名称 |
PROCESS FOR PREPARING BIS(CYCLOPENTADIENYL)RUTHENIUM DERIVATIVE, BIS(CYCLOPENTADIENYL)RUTHENIUM DERIVATIVE PREPARED THROUGH THE PROCESS AND CHEMICAL VAPOR DEPOSITION PROCESS FOR RUTHENIUM FILM OR RUTHENIUM COMPOUND FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a process for preparing a bis(cyclopentadienyl)ruthenium derivative comprising only a few steps wherein a highly pure bis(cyclopentadienyl)ruthenium derivative can be prepared. SOLUTION: The process for preparing a bis(cyclopentadienyl)ruthenium derivative comprises a step wherein a bis(cyclopentadienyl)iron derivative (ferrocene derivative) is heated and allowed to react with a ruthenium compound in an inert gas in a sealed vessel. Here, the inert gas is preferably helium, argon or nitrogen, and the heating temperature is preferably from 200 to 350 deg.C.
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申请公布号 |
JP2002308894(A) |
申请公布日期 |
2002.10.23 |
申请号 |
JP20010114726 |
申请日期 |
2001.04.13 |
申请人 |
TANAKA KIKINZOKU KOGYO KK |
发明人 |
OKAMOTO KOJI |
分类号 |
C07F17/02;C07F15/00;C23C16/18;H01L21/28;H01L21/285;(IPC1-7):C07F17/02 |
主分类号 |
C07F17/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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