PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light for exposure having a wavelength of 1 nm band to 30 nm band or of 110 nm band to 180 nm band. SOLUTION: A pattern forming material having a polymer containing a first unit of formula 1 and a second unit of formula 2 and an acid generator is applied on a substrate to form a resist film. In the formulae, R1 and R2 are the same or different and each alkyl or Cl- or F-containing alkyl; R3 is a protective group which is released by an acid; and (m) is an integer of 0-5. The resist film is patternwise exposed by irradiation with light for exposure having a wavelength of 1 nm band to 30 nm band or of 110 nm band to 180 nm band and the patternwise exposed resist film is developed to form the objective resist pattern.