Low impedance distributed amplifier adapter for opto-electronic microwave signal transmitter with very wide band

摘要

The distributed amplifier consists of field effect transistor cells (CE1-CE4) interconnected by a drain line (LD) and a gate line (LG). In each cell the passive inductors (12.1,14.1,22.1,24.1) and the capacitors (10.1,20.1,26.1) are chosen so that the cell characteristic impedance is less than that of the preceding cell. The characteristic impedance of the drain line is brought progressively to a value selected for low impedance matching between the 50 ohms of the upstream electronic circuit and the few ohms of the downstream circuit.