PASSIVATION OF GAN BASED FETS

摘要

Surface passivation of GaN based FETs, including undoped AlGaN/GaN HEMTs and MISFETs, and doped GaN MESFETs, reduces or eliminates the surface effects responsible for limiting both the RF current and breakdown voltages of the devices. Passivation is provided through deposition of a layer (32) made of a dielectric, such as silicon nitride, silicon dioxide or polyimide, on a barrier layer (16) between a source (24) and a drain (25) of the FET (10).