发明名称 |
RAPID THERMAL CVD APPARATUS AND METHOD FOR FABRICATING SUBSTRATE AND THIN FILM BY USING THE SAME |
摘要 |
PURPOSE: A rapid thermal CVD(Chemical Vapor Deposition) apparatus and a method for fabricating a substrate and a thin film by using the same are provided to improve quality of a deposited thin film and to lower a processing temperature by the rapid thermal CVD apparatus. CONSTITUTION: A preheat portion(20) preheats a reaction gas of a reaction furnace by using a radio wave having a pitch of 13.56 MHz. The reaction gas is transmitted to a substrate(1) loaded on a quartz tube(30). A lamp(44) is a halogen lamp for emitting light of a near infrared region. The light of the lamp(44) passes through the quartz tube(30). The substrate(1) is heated by the light of the lamp(44). A pump is installed at an end portion of a reaction furnace. The pump is used for discharging a gas of the reaction furnace to the outside. A lamp control portion(43) controls an operation of the lamp(44) according to a timer(41) and a pyrometer(42).
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申请公布号 |
KR20020080028(A) |
申请公布日期 |
2002.10.23 |
申请号 |
KR20010019062 |
申请日期 |
2001.04.10 |
申请人 |
HESED TECHNOLOGY CO., LTD. |
发明人 |
CHO, HUN YEONG;JUN, YEONG GWON |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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