发明名称 RAPID THERMAL CVD APPARATUS AND METHOD FOR FABRICATING SUBSTRATE AND THIN FILM BY USING THE SAME
摘要 PURPOSE: A rapid thermal CVD(Chemical Vapor Deposition) apparatus and a method for fabricating a substrate and a thin film by using the same are provided to improve quality of a deposited thin film and to lower a processing temperature by the rapid thermal CVD apparatus. CONSTITUTION: A preheat portion(20) preheats a reaction gas of a reaction furnace by using a radio wave having a pitch of 13.56 MHz. The reaction gas is transmitted to a substrate(1) loaded on a quartz tube(30). A lamp(44) is a halogen lamp for emitting light of a near infrared region. The light of the lamp(44) passes through the quartz tube(30). The substrate(1) is heated by the light of the lamp(44). A pump is installed at an end portion of a reaction furnace. The pump is used for discharging a gas of the reaction furnace to the outside. A lamp control portion(43) controls an operation of the lamp(44) according to a timer(41) and a pyrometer(42).
申请公布号 KR20020080028(A) 申请公布日期 2002.10.23
申请号 KR20010019062 申请日期 2001.04.10
申请人 HESED TECHNOLOGY CO., LTD. 发明人 CHO, HUN YEONG;JUN, YEONG GWON
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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