发明名称 Method of fabricating a microwave microstrip/waveguide transition structure
摘要 A microwave microstrip/waveguide transition structure includes a substrate, an elongated microstrip layer residing on a surface of the substrate, and an elongated integral hollow waveguide on the surface of the substrate. The microstrip layer and a side of the hollow waveguide constitute a single continuous piece of metal. The transition structure is fabricated by providing a substrate, depositing a metallic layer on the substrate, and depositing a metallic hollow housing continuous with a portion of a length of the metallic layer. The metallic hollow waveguide bounded by the metallic layer and the metallic hollow housing and having a contained volume therewithin is thereby defined.
申请公布号 US6467152(B1) 申请公布日期 2002.10.22
申请号 US19990460184 申请日期 1999.12.11
申请人 HUGHES ELECTRONICS CORP. 发明人 DE LOS SANTOS HECTOR J.;LIN YU-HUA KAO;KWON ANDREW H.;DITMARS ERIC D.;DUNWOODY JOHN R.
分类号 H01P5/107;H01P11/00;(IPC1-7):H01Q17/00;B29D11/00;H05K3/30 主分类号 H01P5/107
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