| 摘要 |
In a method for mathematically characterizing a multizone CMP carrier, alternating zones are pressurized to a first pressure and the remaining zones are pressurized to a second lower pressure. A first wafer may then be polished using this combination of pressures and a first material removal profile may then be found. The pressures in the zones may then be reversed, and a second wafer may then be polished using this new combination of pressures, and a second material removal profile may then be found. Symmetrical points of intersection about the central axis of the carrier may be determined which identify the radius of each zone, and each point corresponds to a middle point for each transitional area between zones. The absolute values for the first derivatives for two pairs of symmetrical points may be averaged to determine a set of parameters that allow the multizone carrier to be mathematically characterized.
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