发明名称 |
Fabrication method of capacitor for integrated circuit |
摘要 |
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
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申请公布号 |
US6468875(B2) |
申请公布日期 |
2002.10.22 |
申请号 |
US20010768170 |
申请日期 |
2001.01.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UEMOTO YASUHIRO;FUJII EIJI;ARITA KOJI;NAGANO YOSHIHISA;SHIMADA YASUHIRO;AZUMA MASAMICHI;INOUE ATSUO;IZUTSU YASUFUMI |
分类号 |
H01L21/02;H01L21/314;H01L27/115;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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