| 摘要 |
A thin film of a metal compound such as metal oxide, nitride and carbide is formed on a substrate by sputtering a target in vacuum in the presence of an inert gas and a reactive gas. From a curve of an input power supplied from a DC supply to the target versus an input voltage between the target and the substrate, a transition point of input power at which an abrupt change of the input voltage occurs is determined. The input power during sputtering is controlled using the transition point as a reference, thereby controlling the composition or physical properties of the thin film. When a cobalt oxide thin film is formed on a substrate in this way, rubber can be vulcanized thereto to form a firm bond.
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