发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween.
|
申请公布号 |
US6469317(B1) |
申请公布日期 |
2002.10.22 |
申请号 |
US19990464200 |
申请日期 |
1999.12.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L31/036;H01L31/20;H01L29/04;H01L31/037;H01L31/112 |
主分类号 |
H01L21/77 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|