| 摘要 |
A fluctuation of a transistor characteristic is calculated based on deviation of the value measured for each of specified steps, and total fluctuation of the transistor characteristic is calculated for the previous steps prior to an annealing step. The processing temperature of the annealing step is controlled to cancel the total fluctuation of the transistor characteristic caused by the previous steps to obtain a designed transistor characteristic. The control of the processing temperature is effected for each zone of a wafer.
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