发明名称 |
Backside contact for integrated circuit and method of forming same |
摘要 |
A contact formed from the backside of an integrated circuit device includes a first conductive layer on a first surface of the integrated circuit device and a second conductive layer on a second surface of the device. The two conductive layers are coupled by way of an opening through the semiconductor substrate separating the two conductive layers. A method for making the backside contact comprises forming the first conductive layer, forming an opening through the semiconductor substrate to expose at least a portion of the underside of the first conductive layer, then filling the opening with a conductive material to provide an electrical contact to the first conductive layer from the backside of the integrated circuit device.
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申请公布号 |
US6468889(B1) |
申请公布日期 |
2002.10.22 |
申请号 |
US20000633931 |
申请日期 |
2000.08.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
IACOPONI JOHN A.;MIETHKE JOHN C. |
分类号 |
H01L23/52;H01L21/3205;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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