Metal oxide semiconductor transistor circuit and semiconductor integrated circuit using the same

摘要

A select circuit switches a connection from a gate terminal of an NMOS transistor or a substrate voltage terminal to a semiconductor substrate or well by a Select signal. At this time, a voltage of the substrate voltage terminal is set to be lower than a gate voltage in an OFF state. Consequently, when the semiconductor substrate or well is connected to the gate terminal in an active state, the off-current can be reduced to 10-10 A/mum. When the substrate voltage terminal is connected to the semiconductor substrate or well in a standby state, the off-current can be further reduced to 10-12 A/mum. Thus, leakage currents in the standby state and leakage currents flowing from the power supply voltage terminal to the ground voltage terminal in an active state can be suppressed.