| 摘要 |
There is disclosed a method of manufacturing a copper wiring in a semiconductor device that overcomes the limitation of copper filling into a contact hole and a trench formed on an insulating film, by first forming a chemical enhancer layer, performing immersion wet cleaning and warm annealing processes so that the chemical enhancer layer can be remained only at the contact hole and the bottom portion of the trench, performing a MOCVD method using a copper precursor and then filling the contact hole and the trench by a self-aligned copper growth method for growing copper within the selected contact hole and the trench thus realizing reappearance of copper deposition process and also obtaining a thin copper film of a good film quality.
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