| 摘要 |
A method of fabricating a semiconductor device having contaminant-reduced Ca-doped Cu surfaces formed on Cu interconnects by cost-effectively depositing a Cu-Ca-X surface and subsequently removing the contaminant layer contained therein; and a device thereby formed. In the Cu-Ca-X surface, where contaminant X=C, S, and O, removal of the contaminant from such surface is achieved by (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Cu-Ca-X surface under vacuum onto the underlying Cu interconnect material to form a Cu-Ca film on Cu interconnect structure, thereby producing a uniform Cu-Ca film (i.e., Cu-rich with 0.2-5% Ca) on the Cu surface of an interconnect for maximizing Ca-Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca-Cu/Cu interconnect structure.
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