发明名称 |
Non-volatile semiconductor memory device and manufacturing method thereof |
摘要 |
A non-volatile semiconductor memory device allowing accurate reading of data, having superior charge detection characteristic and high rewriting durability, and free of undesirable writing of a non-selected memory cell transistor is provided. A memory cell transistor 100b includes a silicon substrate 1 having a main surface, a plurality of strip shaped isolating oxide films 4a and 4b formed on the main surface 1b of silicon substrate 1 to continuously extend approximately along the <100> direction, and strip shaped source and drain regions 5b and 6b formed on the main surface 1b of silicon substrate 1 to continuously extend approximately along the <100> direction.
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申请公布号 |
US6469338(B2) |
申请公布日期 |
2002.10.22 |
申请号 |
US19990324808 |
申请日期 |
1999.06.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOBAYASHI KIYOTERU;TSUJI NAOKI |
分类号 |
H01L21/8247;H01L27/115;H01L29/04;H01L29/788;H01L29/792;(IPC1-7):H01L29/94 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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