Solid state image sensing device and method of producing the same

摘要

A solid state image sensing device comprises a cell area, located at a semiconductor substrate, including photoelectric conversion portions and charge transfer portions and a peripheral circuit area formed around the cell area located at the semiconductor substrate. The peripheral circuit area includes a first p+-type semiconductor region and an insulating film with a relatively large thickness formed on the first p+-type semiconductor region. The cell area further includes a second p+-type semiconductor region and an insulating film with a relatively small thickness formed on the second p+-type semiconductor region. The majority of the insulating film with the relatively large thickness is formed by means of a CVD process.