发明名称 |
Method for producing semiconductor temperature sensor |
摘要 |
A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.
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申请公布号 |
US6468825(B1) |
申请公布日期 |
2002.10.22 |
申请号 |
US20000502709 |
申请日期 |
2000.02.11 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
MACHIDA SATOSHI;KAWAHARA YUKITO;KUHARA KENTARO;SHIMIZU TORU;KOJIMA YOSHIKAZU |
分类号 |
G01K7/01;H01L21/8222;H01L27/082;(IPC1-7):H01L21/00;H01L21/823 |
主分类号 |
G01K7/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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