发明名称 Method for producing semiconductor temperature sensor
摘要 A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.
申请公布号 US6468825(B1) 申请公布日期 2002.10.22
申请号 US20000502709 申请日期 2000.02.11
申请人 SEIKO INSTRUMENTS INC. 发明人 MACHIDA SATOSHI;KAWAHARA YUKITO;KUHARA KENTARO;SHIMIZU TORU;KOJIMA YOSHIKAZU
分类号 G01K7/01;H01L21/8222;H01L27/082;(IPC1-7):H01L21/00;H01L21/823 主分类号 G01K7/01
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