发明名称 Die support structure
摘要 Disclosed is a method of forming a support structure for supporting multiple dies and resulting structure. The support structure has a cavity with an upper die support surface, sidewalls providing the upper die support surface, and a lower die support bottom surface connected with the sidewalls. The support structure can be formed of a plurality of layers. A first semiconductor die is secured on the lower die support surface and a second semiconductor die is secured to the upper die support surface. An aperture can be formed from the structure bottom surface to the cavity to facilitate electrical connections between the first die and electrical contact areas on the support structure. An encapsulating material is formed around the dies, the electrical connections, and the vacant cavity space to form a packaged semiconductor device.
申请公布号 US6469376(B2) 申请公布日期 2002.10.22
申请号 US20010803045 申请日期 2001.03.12
申请人 MICRON TECHNOLOGY INC. 发明人 VAIYAPURI VENKATESHWARAN
分类号 H01L21/44;H01L23/02;H01L23/14;H01L23/31;H01L23/498;H01L23/538;H01L25/065;(IPC1-7):H01L23/02 主分类号 H01L21/44
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