| 摘要 |
A semiconductor device includes a ferroelectric capacitor and a protective film of Al2O3 for blocking penetration of H2 atmosphere into the ferroelectric capacitor, wherein the Al2O3 protective film has a density of about 3.0 g/cm3 or more when the thickness of said protective film exceeds about 20 nm and a density of about 3.1 g/cm3 or more when the thickness of the protective film is about 20 nm or less.
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