| 摘要 |
PURPOSE: An interconnection formation method of a semiconductor device is provided to improve a throughput without using expensive cluster having multi-chamber by using another chamber while downing one chamber. CONSTITUTION: A contact hole is formed by sequentially depositing a conductive layer(110) and a dielectric film(120) on a semiconductor substrate(100) and selectively etching the dielectric film(120) and the conductive film(110) using a photoresist pattern as a mask. After depositing the first barrier metal film(163) on the resultant structure, an insulating layer is formed by thermal oxidation of the first barrier metal film(163). The insulating layer is then removed by plasma treatment and the second barrier metal film(166) is deposited on the resultant structure. After depositing a tungsten film on the second barrier metal film(166), a tungsten plug(180) is formed by CMP(Chemical Mechanical Polishing) the tungsten film.
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