| 摘要 |
PURPOSE: Provided is a ferroelectric bismuth titanate containing rare earth metal, Bi4-xRxTi3O12, having low-temperature phase formation, high remanent polarization and high fatigue resistance for use in memory, sensor and electronic optics fields. CONSTITUTION: The ferroelectric bismuth titanate containing rare earth metal is expressed by Bi4-xRxTi3O12(BRT), wherein R is a rare earth metal such as Nd, Gd, Pr, Sm or a mixture thereof and x is in a range of 0.25-1.25. The ferroelectric BRT produced in various forms of film and bulk has phase formation lower than 700deg.C, high remanent polarization(2Pr) more than 15 microcoulomb/cm¬2 and non-volatile polarization reduction(Pnv=Psw-Pns) less than 20%. The ferroelectric BRT film is produced by coating a substrate with the solution obtained from dissolving each salt of Bi, R, and Ti in a molar ratio of 4-x : x : 3.
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