| 摘要 |
PURPOSE: Provided are a maleimide-based photoresist monomer containing a halogen element and a photoresist polymer containing the monomer, which are excellent in etching resistance, heat resistance, and adhesive property and can be used under the light source of ArF and VUV. CONSTITUTION: The photoresist monomer is N-perfluoropropyl maleimide or N-perfluorooctyl maleimide and represented by the formula 1. The photoresist polymer contains the photoresist monomer and is poly(N-perfluoropropyl maleimide/t-butyl 5-norbornene-2-carboxylate), poly(N-perfluorooctyl maleimide/t-butyl 5-norbornene-2-carboxylate/norbornylene), and etc. In the formula, X1 and X2 are H, CF3, or a halogen element, R1 is F or CF3, R2 and R3 are H, F, CF3, OH, C1-C10 alkyl, C1-C10 perfluoro alkyl, or C1-C10 alkoxy. |
