METHOD FOR PREVENTING SURFACE MORPHOLOGY OF METAL LAYER FROM BEING DETERIORATED BY THERMAL OXIDATION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING SUCH METAL LAYER

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to control generation of metal oxide caused by a subsequent annealing process and to improve surface morphology of a metal layer, by oxidizing the metal layer at a temperature lower than that of the annealing process before the metal layer is annealed in an oxygen atmosphere. CONSTITUTION: The metal layer(4a) is formed on a semiconductor substrate. The metal layer is oxidized at the first temperature so that the upper portion(5) of the metal layer is changed to be a mixed phase of metal and oxygen constituting the metal layer. The metal layer having the metal-oxygen mixed phase is annealed at the second temperature higher than the first temperature in an oxygen atmosphere.