STRUCTURE OF INTERCONNECTION INSULATING LAYER USING HYDROGEN-SILSESQUIOXANE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A structure of an interconnection insulating layer using Hydrogen Silsesquioxane(HSQ) is provided to improve filling-up characteristic of via holes by filling HSQ only between neighboring wires. CONSTITUTION: The interconnection insulating layer(100) is covered with plural interconnection patterns(200) composed of a conducting pattern(120), a barrier metal pattern(130) and a diffusion barrier pattern(140) and an interconnection insulating pattern(151) is surrounded by them. The plural interconnection patterns are covered with an interlayer dielectric(160), containing via holes(170) through it ,exposing the metal barrier layer and filled up by a via plug.