发明名称 |
LAYOUT STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
<p>PURPOSE: To improve noise resistance and surge resistance in a semiconductor integrated circuit that integrally includes an analogue circuit and a digital circuit as well as an RC filter against electromagnetic wave noise. CONSTITUTION: A semiconductor integrated circuit integrally includes an RC filter against electromagnetic wave noise as well as an analogue circuit and a digital circuit on the same substrate. The circuit has a layout in which a positive electrode 11 of a capacitor 1 constituting the RC filter is made distant from elements and wiring 2 constituting the analogue circuit and the digital circuit to such an extent that malfunction of a circuit element is not caused by noise superimposed on the positive electrode 11, or that dielectric breakdown of the capacitor 1 of the RC filter or latch-up or dielectric breakdown of a circuit element is not caused by a surge applied to the positive electrode 11. Specifically, a gap between the positive electrode 11 of the RC filter and circuit elements and wiring 2 is made equal to the minimum gap of an layout rule or greater or five times of the minimum gap of the layout rule including a safe margin.</p> |
申请公布号 |
KR20020079564(A) |
申请公布日期 |
2002.10.19 |
申请号 |
KR20020019437 |
申请日期 |
2002.04.10 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
NISHIKAWA MUTSUO;UEMATSU KATSUYUKI;UEYANAGI KATSUMICHI |
分类号 |
H01L21/822;G06F17/50;H01L21/82;H01L27/02;H01L27/04;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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