| 摘要 |
PURPOSE: A method for fabricating an organic field emission display device is provided to prevent diffusion of a cathode electrode metal to a TFT(Thin Film Transistor) by forming a cathode electrode as a metal material of a low work function and a low diffusion ratio. CONSTITUTION: A TFT device is formed on a substrate(110) by a semiconductor layer(130), a gate electrode(150), and a source/drain electrode(170,175). The third interlayer dielectric(180) is formed on a whole surface of the substrate(110). A contact hole is formed on a predetermined position of the third interlayer dielectric(180). An ITO layer is formed on the third interlayer dielectric(180). An anode electrode(200) is formed by etching the ITO layer. A protective layer(210) is formed thereon. A contact hole for pixel is formed on an upper face of the protective layer(210). A light emission device layer(220) is formed by coating an organic material on the contact hole for pixel. A cathode electrode portion is formed by depositing a cathode metal on an upper face of the light emission device layer(220). |
