| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which enhances the gattering capability of a semiconductor wafer, and to provide a technique which restrains crystal defects of the semiconductor wafer. SOLUTION: A base substrate 2A whose (100) plane is used as a main face and in which a notch 1A is formed in a <011> orientation inside its face and a bonding substrate 2B, whose (100) plane is used as a main face and in which a notch 1B is formed in a <010> orientation inside its face are pasted, in such a way that the notches are overlapped, and an SOI substrate is formed. In the semiconductor integrated circuit device formed by using the SOI substrate, the longitudinal direction of each element is formed in parallel or perpendicular to the <011> orientation of the base substrate 2A. |
