| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method by which a semiconductor element that is excellent in adhesion and environmental resistance can be formed efficiently. SOLUTION: This method of forming semiconductor element includes a process of forming a plurality of PIN junctions composed of a silicon-based material on a substrate by using the high-frequency plasma CVD method under a pressure which is equal to or lower than the atmospheric pressure. The process includes a step of exposing a P-type layer or N-type layer exposed on the surface of one of the PIN junctions to an oxygen-containing atmosphere after part of the P-, I-, and N-type layers or part of the N-, I- and P-type layers of the PIN junction is formed, a step of completing the PIN junction by forming a layer having the same conductivity as the P- or N-type layer exposed to the atmosphere has on the P- or N-type layer, and a step of forming a P-N interface by forming the N- or P-type layer of the other PIN junction adjoining the PIN junction.</p> |
