| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photovoltaic element that can be formed at an industrially practical film forming speed and has photoelectric conversion efficient self-recoverability against an optical degradation phenomenon caused by a Staebler-Wronski effect. SOLUTION: This photovoltaic element containing a semiconductor layer composed of one pair of pin junctions exhibits the photoelectric conversion efficiency self-recoverability when the element is continuously irradiated with light.</p> |
