| 摘要 |
PROBLEM TO BE SOLVED: To provide a complementary metal-oxide film semiconductor integrated circuit which contains a notched gate in a support device region, and to provide a method of forming the integrated circuit. SOLUTION: A gate stack 16 is formed on a substrate, a patterned mask 24 is formed on the gate stack, the stack gate is etched by using the mask, and rather than the entire part but a part of a gate conductor is removed. A gap-filling film 28 is formed on the whole face, and the gap-filling film is removed in such a way that the gap filling film is left between masked gate stacks in an array device region. A spacer is formed on the exposed sidewall of the masked gate stack, and the exposed gate conductor inside the array device region and inside the support device region is removed. An undercut is formed in the lower exposed part of the remaining gate conductor. The remaining gap filling film is removed from the masked protective gate stack inside the array device region.
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