| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for preventing a contaminant from being stuck on the back of a wafer in the case of treatment, while providing the wafer inside a chamber having a wafer holding part. SOLUTION: An inert gas argon is supplied into the chamber, before a wafer touches the wafer holding part, plasma is injected and the wafer is heated to a treatment temperature by plasma. After the wafer is heated, the wafer is moved to the wafer holding part by a lift pin for treatment.</p> |
