NITRIDE SEMICONDUCTOR LASER ELEMENT AND FORMING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor laser element with low operation voltage by making the deposition force of a whole electrode layer to a nitride semiconductor layer stronger without damaging low contact property. SOLUTION: The nitride semiconductor laser element is provided with a p-type GaN contact layer 108, a Pt electrode layer 109 which is formed on the p-type GaN contact layer 108, includes a material whose deposition force to the p-type GaN contact layer 108 is strong and has the thickness of not more than 3 nm and a Pd electrode layer 110 which is formed on the Pt electrode layer 109 and includes a Pd layer whose deposition force to the p-type GaN contact layer 108 is weaker than the Pt electrode layer 109 and contact resistance to the p-type GaN contact layer 108 is lower than the Pt electrode layer 109.