| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to prevent electrical damage caused by a short-circuit between floating gates, by making the floating gate not left in an anisotropical etch process. CONSTITUTION: The first insulation layer is formed on a semiconductor substrate. After the first conductive layer having a density gradient is formed on the first insulation layer, the second insulation layer is formed on the first conductive layer. The first insulation layer, the second insulation layer, the first conductive layer and the substrate are selectively etched to form a trench in a predetermined region of the substrate. After an insulation layer sidewall is formed inside the trench, the third insulation layer is formed in the trench. The second insulation layer is eliminated. The second conductive layer is formed on the first conductive layer, extending to the third insulation layer.
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