发明名称 |
RAPID THERMAL PROCESSING APPARATUS FOR FABRICATING SEMICONDUCTOR |
摘要 |
PURPOSE: A rapid thermal processing apparatus for fabricating a semiconductor is provided to more rapidly exhaust the gas induced to the inside of a tube, by installing a pump and the third gas exhaust line in addition to the first and second gas exhaust lines. CONSTITUTION: The first and second gas exhaust lines(106,107) exhaust the induced gas to the exterior, connected to the tube(102). The pump(108) and the third gas exhaust line(109) exhaust more smoothly the gas, connected to the first gas exhaust line. A door flange(104) fixes a chamber(100) and a wafer tray(103) to/from which a wafer is loaded/unloaded.
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申请公布号 |
KR20020078423(A) |
申请公布日期 |
2002.10.18 |
申请号 |
KR20010018782 |
申请日期 |
2001.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN JU;PARK, JAE CHUN |
分类号 |
H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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