发明名称 RAPID THERMAL PROCESSING APPARATUS FOR FABRICATING SEMICONDUCTOR
摘要 PURPOSE: A rapid thermal processing apparatus for fabricating a semiconductor is provided to more rapidly exhaust the gas induced to the inside of a tube, by installing a pump and the third gas exhaust line in addition to the first and second gas exhaust lines. CONSTITUTION: The first and second gas exhaust lines(106,107) exhaust the induced gas to the exterior, connected to the tube(102). The pump(108) and the third gas exhaust line(109) exhaust more smoothly the gas, connected to the first gas exhaust line. A door flange(104) fixes a chamber(100) and a wafer tray(103) to/from which a wafer is loaded/unloaded.
申请公布号 KR20020078423(A) 申请公布日期 2002.10.18
申请号 KR20010018782 申请日期 2001.04.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN JU;PARK, JAE CHUN
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
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