| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in a stacked memory cell structure, a ferroelectric capacitor and bonding part of a polysilicon plug to the ferroelectric capacitor are degraded, due to the diffusion of oxygen or hydrogen in a later process. SOLUTION: A ferroelectric electrode structure is formed as a multilayer structure, composed of an oxidation-resistant metal. By using a reverse diffusion concentration distribution, formed when a diffusing substance is trapped by a lamination interface, the diffusion of the oxygen or the like is prevented.
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