| 摘要 |
PROBLEM TO BE SOLVED: To obtain a GaN layer having a small number of lattice defects by reducing the difference of a lattice constant in an axial direction between ZnO buffer and GaN layers in an InxGayAlzN-based semiconductor light emitting diode. SOLUTION: The ZnO buffer layer 3 having small specific resistance is grown on a conductive Si substrate 2, and n-type GaN, n-type AlGaN, InGaN (light emitting), p-type AlGaN, and p-type GaN layers 4, 5, 6, 7, and 8 are successively grown, thus forming the semiconductor light emitting device 1 having double hetero junction structure. A c constant of the ZnO buffer layer is set to 5.2070 Åor higher, preferably, 5.21 to 5.28 Å, by adjusting the parameter of a sputter apparatus. |
