发明名称 SEMICONDUCTOR TEST METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor test method in which a test time is short. SOLUTION: In a final test of a multi-layer memory IC1, a test of a SRAM chip 2 and a test of a flash memory chip 3 are performed in parallel. For example, a test of the flash memory chip 3 is performed during a data holding period of a hold-test of the SRAM chip 2. Therefore, a test time can be shortened compared with the conventional one in which a test of the SRAM chip 2 is performed after finish of a test of the flash memory chip 3.</p>
申请公布号 JP2002304898(A) 申请公布日期 2002.10.18
申请号 JP20010108319 申请日期 2001.04.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUKUSHIMA YUKIE
分类号 G01R31/26;G01R31/28;G01R31/30;G06F12/16;G11C11/413;G11C16/02;G11C17/00;G11C29/00;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/26
代理机构 代理人
主权项
地址