PLANARIZATION TREATMENT METHOD AND CMP APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a planarization treatment method and a CMP apparatus for realizing a planarization level which is small in variation in film thickness using a small polishing amount. SOLUTION: As shown in step 11, specified regions which may cause unevenness of the planarization on a layer to be planarized is selected at a step before chemical mechanical polishing. In a step 12, a chemical liquid, containing at least an etching liquid, is jetted on the selected specified regions by an ink- jetting method to perform a wet etching control. Thereafter, as shown in step 13, the layer to be planarized including the specified regions is subjected to a chemical mechanical polishing process.