FACE TYPE WAVELENGTH SELECTIVE FILTER AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a face-type wavelength selective filter which operates at a desired transmission wavelength. SOLUTION: The face-type wavelength selective filter 40 has a lower DBR mirror 44 consisting of a semiconductor multilayered film of 28 pairs of AlAs layers each having 135 nm film thickness and GaAs layers each having 114 nm film thickness, a resonance medium 46 consisting of Gax In1-x N1-y-z Asy Sbz (wherein x=0.87, y=0.95 and z=0.01), and an upper DBR mirror 48 consisting of a semiconductor multilayered film of 23 pairs of AlAs layers each having 135 nm film thickness and GaAs layers each having 114 nm film thickness, as the resonator structure on a GaAs substrate 42. A SiN film 50 is formed as an antireflection film of the substrate surface on the back face of the GaAs substrate. The obtained face-type wavelength selective filter functions as a wavelength selective filter having the transmission peak wavelength at about 1.55μm.